isc N-Channel Mosfet
Transistor
4N70
·FEATURES ·Low RDS(on) = 2.
5Ω(MAX) ·Improved Gate Charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching mode power supplies ·DC-DC & DC-AC converter
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
700
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
4
A
IDM
Drain Current-Single Plused
16
A
Ptot
Total Dissipation@TC=25℃
36
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Ther...