Part Number
|
1SS302A |
Manufacturer
|
Toshiba |
Description
|
Silicon Epitaxial Planar Switching Diodes |
Published
|
Sep 18, 2016 |
Detailed Description
|
Switching Diodes Silicon Epitaxial Planar
1SS302A
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) AEC-Q101 ...
|
Datasheet
|
1SS302A
|
Overview
Switching Diodes Silicon Epitaxial Planar
1SS302A
1.
Applications
• Ultra-High-Speed Switching
2.
Features
(1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.
6 ns (typ.
) Note 1: For detail information, please contact our sales.
3.
Packaging and Internal Circuit
USM
1SS302A
1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2
©2017-2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2014-12
2022-11-22 Rev.
5.
0
1SS302A
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
Peak forward current
IFM
(Note 1)
300
m...
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