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1SS300

Toshiba Semiconductor
Part Number 1SS300
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications 1SS300 Unit: mm z Small pac...
Datasheet PDF File 1SS300 PDF File

1SS300
1SS300

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications 1SS300 Unit: mm z Small package : SC-70 z Low forward voltage : VF (3) = 0.
92V (typ.
) z Fast reverse recovery time : trr = 1.
6ns (typ.
) z Small total capacitance : CT = 2.
2pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P 300 (*) 100 (*) 2 (*) 100 mA mA A mW Junction temperature Storage temperature Tj 125 °C JEDEC Tstg −55 to 125 °C JEITA ― SC-70 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 1-2P1A temperature/current/voltage and the significant change in Weight: 0.
006g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/vol...


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