DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2047 UHF power LDMOS
transistor
Product specification Supersedes data of 1999 Jul 01 1999 Dec 02
Philips Semiconductors
Product specification
UHF power LDMOS
transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.
8 to 2.
2 GHz).
• Internal input and output matching for high gain and efficiency APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2200 MHz frequency range.
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS
transistor encapsul...