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BLF202

NXP
Part Number BLF202
Manufacturer NXP
Description HF/VHF power MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification 1999 Oct 20 Philip...
Datasheet PDF File BLF202 PDF File

BLF202
BLF202

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification 1999 Oct 20 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch.
APPLICATIONS • Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.
5 V.
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap.
handbook, halfpage BLF202 PINNING - SOT409A PIN 1, 8 2, 3 4, 5 6, 7 source gate source drain DESCRIPTION 8 5 1 Top view 4 MBK150 Fig.
1 Simplified outline.
QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common source test circuit.
MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 12.
5 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
PL (W) 2 Gp (dB) >10 ηD (%) >50 1999 Oct 20 2 Philips Semiconductors Product specification HF/VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature Tmb ≤ 85 °C CONDITIONS MIN.
− − − − −65 − BLF202 MAX.
40 20 1 5.
7 150 200 UNIT V V A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Tmb ≤ 85 °C, Ptot = 5.
7 W VALUE 20.
5 UNIT K/W handbook, halfpage 10 MCD789 ID (A) 1 (1) (2) 10−1 10−2 1 10 VDS (V) 102 (1) Current is this area may be limited by RDS(on).
(2) Tmb = 85 °C.
Fig.
2 DC SOAR.
1999 Oct 20 3 Philips Semiconductors Product specification HF/VHF power MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise spec...


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