DISCRETE SEMICONDUCTORS
DATA SHEET
BLF245 VHF power MOS
transistor
Product specification September 1992
Philips Semiconductors
Product specification
VHF power MOS
transistor
FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatch.
g
MBB072
BLF245
PIN CONFIGURATION
lfpage
1
4 d
s
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS
transistor designed for large signal amplifier applications in the VHF frequency range.
The
transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap.
All leads are isolated from the flange.
Matched gate-source voltage (VGS) groups are available on request...