Part Number
|
3SK309 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
GaAs N Channel Dual Gate MES FET UHF RF Amplifier |
Published
|
Mar 30, 2005 |
Detailed Description
|
3SK309
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
ADE-208-472 A 2nd. Edition Features
• Capable of low voltage o...
|
Datasheet
|
3SK309
|
Overview
3SK309
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
ADE-208-472 A 2nd.
Edition Features
• Capable of low voltage operation (VDS = 1.
5 to 3 V) • Excellent low noise characteristics (NF = 1.
25 dB typ.
at f = 900 MHz) • High power gain (PG = 21.
0 dB typ.
at f = 900 MHz)
Outline
CMPAK–4
2 3 4 1 1.
Source 2.
Gate1 3.
Gate2 4.
Drain
3SK309
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 –4 –4 18 100 125 –55 to +125 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Gate 1 to cutof...
Similar Datasheet