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3SK309

Hitachi Semiconductor
Part Number 3SK309
Manufacturer Hitachi Semiconductor
Description GaAs N Channel Dual Gate MES FET UHF RF Amplifier
Published Mar 30, 2005
Detailed Description 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features • Capable of low voltage o...
Datasheet PDF File 3SK309 PDF File

3SK309
3SK309

Overview
3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd.
Edition Features • Capable of low voltage operation (VDS = 1.
5 to 3 V) • Excellent low noise characteristics (NF = 1.
25 dB typ.
at f = 900 MHz) • High power gain (PG = 21.
0 dB typ.
at f = 900 MHz) Outline CMPAK–4 2 3 4 1 1.
Source 2.
Gate1 3.
Gate2 4.
Drain 3SK309 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 –4 –4 18 100 125 –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate 1 to cutoff current Gate 2 to cutoff current Symbol I G1SS I G2SS Min — — –0.
2 –0.
2 25 30 18 — — — Typ — — — — 40 40 21 1.
25 20 1.
3 Max –20 –20 –1.
5 –1.
5 60 — — 1.
5 — — Unit µA µA V V mA mS dB dB dB dB Test conditions VG1S = –4 V VG2S = VDS = 0 VG2S = –4 V VG1S = VDS = 0 VDS = 3 V, VG2S = 0 I D = 100 µA VDS = 3 V, VG1S = 0 I D = 100 µA VDS = 3 V, VG1S = 0 VG2S = 0 VDS = 3 V, VG2S = 0 I D = 5 mA, f = 1 kHz VDS = 3 V, VG2S = 0 I D = 5 mA, f = 900 MHz VDS = 1.
5 V, VG2S = 0 I D = 3 mA, f = 900 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Zero gate voltege drain current I DSS Forward transfer admittance Power gain Noise figure Power gain Noise figure Note: Marking is “XV–” |yfs| PG NF PG NF 2 3SK309 Main Characteristics Maximum Channel Power Dissipation Curve 200 Channel Power Dissipation Pch (mW) 20 Typical Output Characteristics –0.
4 V –0.
5 V –0.
6 V Pulse Test –0.
7 V 150 Drain Current ID (mA) 16 12 100 8 –0.
8 V 4 –0.
9 V VG1S = –1 V 1 2 3 4 Drain to Source Voltage VDS (V) 5 50 0 50 100 150 200 Ambient Temperature Ta (°C) 0 Drain Current vs.
Gate1 to Source Voltage 20 VDS = 3 V 0V –0.
2 V Drain Current ID (mA) –0.
4 V –0.
6 V 20 Drain Current vs.
Gate2 to Source Voltage VDS = 3 V 0V –0.
2 V –0.
4 V Drain Current ID (mA) 16 16 12 12 –...


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