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3SK321

Hitachi Semiconductor
Part Number 3SK321
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Dual Gate MOS FET
Published Mar 30, 2005
Detailed Description 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd. Edition Dec. 1998 Application UHF RF amplifier Featur...
Datasheet PDF File 3SK321 PDF File

3SK321
3SK321


Overview
3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd.
Edition Dec.
1998 Application UHF RF amplifier Features • Low noise figure.
NF = 2.
0 dB typ.
at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.
) Outline MPAK-4R 3 4 2 1 1.
Source 2.
Drain 3.
Gate2 4.
Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS I DS(on) Min 12 ±8 ±8 — — 0.
5 –0.
5 0 16 1.
2 0.
6 — 16 — Typ — — — — — — — — 20.
8 1.
5 0.
9 0.
01 19.
5 2.
0 Max — — — ±100 ±100 10 +0.
5 +1.
0 — 2.
2 1.
2 0.
03 — 3 Unit V V V nA nA mA V V mS pF pF pF dB dB VDS = 4 V, VG2S = 3V, I D = 10 mA, f = 900 MHz Test conditions I D = 200 µA , VG1S = –3 V, VG2S = –3 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±6 V, VG2S = VDS = 0 VG2S = ±6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.
5V, VG2S = 3 V VDS = 10 V, VG2S = 3V, I D = 100 µA VDS = 10 V, VG1S = 3V, I D = 100 µA VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “ZX–” |yfs| Ciss Coss Crss PG NF 2 3SK321 Main Characteristics 3 3SK321 Maximum Channel Power Dissipation Curve Pch (mW) 200 (...


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