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3SK300

Hitachi Semiconductor
Part Number 3SK300
Manufacturer Hitachi Semiconductor
Description Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Published Mar 30, 2005
Detailed Description 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st. Edition Features • Low noise figure ...
Datasheet PDF File 3SK300 PDF File

3SK300
3SK300

Overview
3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st.
Edition Features • Low noise figure NF = 1.
0 dB typ.
at f = 200 MHz • High gain PG = 27.
6 dB typ.
at f = 200 MHz Outline MPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain 3SK300 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 ±8 ±8 25 150 150 –55 to +150 Unit V V V mA mW °C °C 2 3SK300 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR)G2SS I G1SS I G2SS I DS(op) Min 14 ±8 ±8 — — 4 0 0 20 2.
4 0.
8 — 24 — 12 — — Typ — — — — — 8 +0.
2 +0.
3 25 3.
1 1.
1 0.
021 27.
6 1.
0 15.
6 3.
0 2.
7 Max — — — ±100 ±100 14 +1.
0 +1.
0 — 3.
5 1.
4 0.
04 — 1.
5 — 4.
0 3.
5 Unit V V V nA nA mA V V ms pF pF pF dB dB dB dB dB Test conditions I D = 200 µA, VG1S = –3 V, VG2S = –3 V I G1 = ±10 µA, VDS = VG2S = 0 I G2 = ±10 µA, VDS = VG1S = 0 VG1S = ±6 V, VDS = VG2S = 0 VG2S = ±6 V, VDS = VG1S = 0 VDS = 6 V, VG1S = 0.
75 V, VG2S = 3 V VDS = 10 V, VG2S = 3 V, I D = 100 µA VDS = 10 V, VG1S = 3 V, I D = 100 µA VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 200 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 60 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Note: Marking is “ZR–” |yfs| Ciss Coss Crss PG NF PG NF NF 3 3SK300 Main Characteristics Maximum Channel Power Dissipation Curve Channel power dissipation Pch (mW) 200 20 T...


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