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3SK319

Hitachi Semiconductor
Part Number 3SK319
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Published Mar 30, 2005
Detailed Description 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st. Edition February 1998 Features • Low no...
Datasheet PDF File 3SK319 PDF File

3SK319
3SK319

Overview
3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st.
Edition February 1998 Features • Low noise characteristics; (NF= 1.
4 dB typ.
at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain Note: Marking is “YB–”.
3SK319 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 ±6 ±6 20 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Symbol Min V(BR)DSS V(BR)G1SS V(BR)G2SS I G1SS I G2SS VG1S(off) VG2S(off) I DS(op) |yfs| Ciss Coss Crss PG NF 6 ±6 ±6 — — 0.
5 0.
5 0.
5 18 1.
3 0.
9 — 18 — Typ — — — — — 0.
7 0.
7 4 24 1.
6 1.
2 Max — — — ±100 ±100 1.
0 1.
0 10 32 1.
9 1.
5 Unit V V V nA nA V V mA mS pF pF pF dB dB VDS = 3.
5V, VG2S = 3V I D = 10mA , f=900MHz Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = ±10µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = ±5V, VG2S = VDS = 0 VG2S = ±5V, VG1S = VDS = 0 VDS = 5V, VG2S = 3V, ID = 100µA VDS = 5V, VG1S = 3V, ID = 100µA VDS = 3.
5V, VG1S = 1.
1V, VG2S = 3V VDS = 3.
5V, VG2S = 3V I D = 10mA , f=1kHz VDS = 3.
5V, VG2S = 3V I D = 10mA , f= 1MHz 0.
019 0.
03 21 1.
4 — 2.
2 2 3SK319 Maximum Channel Power Dissipation Curve Pch (mW) 200 I D (mA) 20 Typical Output Characteristics VG1S = 1.
7 V V G2S = 3 V 16 1.
6 V 1.
5 V 150 Channel Power Dissipation 12 1.
4 V 1.
3 V 1.
2 V 100 Drain Current 8 50 4 1.
1 V 1.
0 V 0.
9 V 0.
8 V 0 50 ...


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