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3SK302

Panasonic
Part Number 3SK302
Manufacturer Panasonic
Description Silicon N-Channel MOS
Published Sep 5, 2018
Detailed Description High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS For UHF amplification s Feature...
Datasheet PDF File 3SK302 PDF File

3SK302
3SK302

Overview
High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS For UHF amplification s Features q Though low voltage operation, performance is equivalent to the conventional product.
q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available.
3SK302 0.
65±0.
15 +0.
2 2.
8 –0.
3 +0.
2 1.
5 –0.
3 Unit : mm 0.
65±0.
15 0.
5R 41 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 32 +0.
1 0.
4 –0.
05 0 to 0.
1 +0.
1 0.
16 –0.
06 +0.
2 1.
1 –0.
1 0.
8 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Drain-Source voltage Gate 1-Source voltage Gate 2-Source voltage Drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S IDS PD Tch Tstg Rating 15 ±8 ±8 30 150 150 – 55 to +150 Unit V V V mA mW ˚C ˚C 0.
4±0.
2 3SK306 1 : Source 2 : Drain 3 : Gate 1 4 : Gate 2 Mini Type Package (4-pin) Unit : mm 0.
425 2.
1±0.
1 1.
25±0.
1 0.
425 32 0.
65 0.
3±0.
1 1.
3±0.
1 2.
0±0.
1 0.
65 41 ...


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