|
Part Number
|
3SK322 |
|
Manufacturer
|
Hitachi Semiconductor |
|
Description
|
Silicon N-Channel Dual Gate MOS FET |
|
Published
|
Mar 30, 2005 |
|
Detailed Description
|
3SK322
Silicon N-Channel Dual Gate MOS FET
ADE-208-712A (Z) 2nd. Edition Dec. 1998 Application
UHF / VHF RF amplifier
...
|
|
Datasheet
|
3SK322
|
Overview
3SK322
Silicon N-Channel Dual Gate MOS FET
ADE-208-712A (Z) 2nd.
Edition Dec.
1998 Application
UHF / VHF RF amplifier
Features
• Low noise figure.
NF = 1.
0 dB typ.
at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.
)
Outline
3SK322
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150 –55 to +150 Unit V V V mA mW °C °C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions ...
Similar Datasheet