MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 4N35/D
GlobalOptoisolator™
6-Pin DIP Optoisolators
Transistor Output
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photo
transistor detector.
• Current Transfer Ratio — 100% Minimum @ Specified Conditions • Guaranteed Switching Speeds • Meets or Exceeds all JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number.
VDE 0884 is a test option.
Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials ...