MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 4N38/D
GlobalOptoisolator™
6-Pin DIP Optoisolators
Transistor Output
The 4N38 and 4N38A(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photo
transistor detector.
• Guaranteed 80 Volt Collector–to–Emitter Breakdown ((BR)CEO)) Minimum • Meets or Exceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number.
VDE 0884 is a test option.
Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • Monitor...