Part Number
|
HAT1035R |
Manufacturer
|
Renesas Technology |
Description
|
Silicon P-Channel Power MOSFET |
Published
|
Nov 20, 2008 |
Detailed Description
|
HAT1035R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of –4 V gate...
|
Datasheet
|
HAT1035R
|
Overview
HAT1035R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of –4 V gate drive • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8FP-8DAV)
78
56
DD
DD
8 7 65
2
4
1 234
G
G
S1
MOS1
S3
MOS2
REJ03G0845-0100 Rev.
1.
00
Apr.
22,2005
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
VDSS
–150
Gate to Source voltage
VGSS
±15
Drain current Drain peak current
ID ID(pulse)Note1
–0.
25 –1
Body-Drain diode reverse Drain current Channel dissipation Channel dissipation
IDR Pch Note2 Pch Note3
–0.
25 1 1.
5
Channel...
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