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HAT1031T

Hitachi Semiconductor
Part Number HAT1031T
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT1031T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-528D (Z) 5th. Edition December 1998 Feature...
Datasheet PDF File HAT1031T PDF File

HAT1031T
HAT1031T

Overview
HAT1031T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-528D (Z) 5th.
Edition December 1998 Features • • • • Low on-resistance Capable of 2.
5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate MOS1 MOS2 HAT1031T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –20 ±10 –2.
5 –20 –2.
5 Unit V V A A A W W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg Note2 Note3 1 1.
5 150 –55 to +150 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s 3.
2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min –20 ±10 — — –0.
5 — — 2.
6 — — — — — — — — — Typ — — — — — 0.
13 0.
21 4 390 200 70 14 75 60 55 –0.
9 45 Max — — ±10 –1 –1.
5 0.
16 0.
28 — — — — — — — — –1.
17 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = –2.
5A, VGS = 0 Note4 IF = –2.
5A, VGS = 0 diF/ dt =20A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±8V, VDS = 0 VDS = –20 V, VGS = 0 VDS = –10V, I D = –1mA I D = –2A, VGS = –4V Note4 I D = –2A, VGS = –2.
5V Note4 I D = –2A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –4V, ID = –2A VDD ≈ –10V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4.
Pulse t...


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