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HAT1033T

Hitachi Semiconductor
Part Number HAT1033T
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT1033T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-532H (Z) 9th. Edition February 1999 Feature...
Datasheet PDF File HAT1033T PDF File

HAT1033T
HAT1033T

Overview
HAT1033T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-532H (Z) 9th.
Edition February 1999 Features • • • • Low on-resistance Capable of 2.
5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 12 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate HAT1033T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings – 20 ± 10 – 3.
5 – 28 – 3.
5 Unit V V A A A W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 1.
3 150 – 55 to + 150 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdow voltage Symbol Min V(BR)DSS – 20 ± 10 — — – 0.
4 — — 5 — — — — — — — — — Typ — — — — — 0.
046 0.
061 8.
0 970 510 150 16 100 245 75 Max — — ± 10 –1 – 1.
4 0.
063 0.
090 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns IF = – 3.
5 A, VGS = 0 Note3 IF = – 3.
5A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = – 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 8 V, VDS = 0 VDS = – 20 V, VGS = 0 VDS = – 10 V, I D = – 1 mA I D = – 2 A, VGS = – 4 V Note3 I D = – 2 A, VGS = – 2.
5 V Note3 I D = – 2 A, VDS = – 10 V Note3 VDS = – 10 V VGS = 0 f = 1MHz VGS = – 4 V, ID = – 2 A VDD ≅ – 10 V Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 3.
Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr – 0.
81 – 1.
06 V 65 — ns 2 ...


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