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HAT1035R

Renesas Technology
Part Number HAT1035R
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1035R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate...
Datasheet PDF File HAT1035R PDF File

HAT1035R
HAT1035R

Overview
HAT1035R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 78 56 DD DD 8 7 65 2 4 1 234 G G S1 MOS1 S3 MOS2 REJ03G0845-0100 Rev.
1.
00 Apr.
22,2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to Source voltage VDSS –150 Gate to Source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.
25 –1 Body-Drain diode reverse Drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note3 –0.
25 1 1.
5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm) 3.
2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm) (Ta = 25°C) Unit V V A A A W W °C °C Rev.
1.
00 Apr.
22, 2005 page 1 of 3 HAT1035R Electrical Characteristics Item Symbol Drain to Source breakdown voltage V(BR)DSS Gate to Source breakdown voltage V(BR)GSS Gate to Source leak current IGSS Zero Gate voltage Drain current IDSS Gate to Source cutoff voltage VGS(off) Static Drain to Source on state resistance RDS(on) RDS(on) RDS(on) Forward transfer admittance |yfs| Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Body–Drain diode forward voltage VDF Body–Drain diode reverse trr recovery time Notes: 4.
Pulse test Min –150 ±15 — — –1.
0 — — — 0.
29 — — — — — — — — — Typ — — — — — 5.
0 6.
0 7.
0 0.
45 92 37 10 10 13 22 15 –0.
9 80 Max — — ±10 –5 –2.
0 6.
2 7.
5 10.
0 — — — — — — — — –1.
4 — (Ta = 25°C) Unit Test Conditions V ID = –10 mA, VGS = 0 V IG = ±100 µA, VDS = 0 µA VGS = ±12 V, VDS = 0 µA VDS = –150 V, VGS = 0 V VDS = –10 V, ID...


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