DatasheetsPDF.com

HAT1036R

Hitachi Semiconductor
Part Number HAT1036R
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT1036R Silicon P Channel Power MOS FET Power Switching ADE-208-662D (Z) 5th. Edition February 1999 Features • Low on-...
Datasheet PDF File HAT1036R PDF File

HAT1036R
HAT1036R

Overview
HAT1036R Silicon P Channel Power MOS FET Power Switching ADE-208-662D (Z) 5th.
Edition February 1999 Features • Low on-resistance R DS(on) = 11 mΩ typ • Capable of -4 V gate drive • Low drive current • High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1036R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings -30 ±20 -12 -96 -12 2.
5 150 –55 to +150 Unit V V A A A W °C °C Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25°C) Item Symbol Min -30 — — -1.
0 — — 12 — — — — — — — — — — — — Typ — — — — 11 21 20 4200 870 360 70 12 14 120 350 100 120 -0.
85 55 Max — ±0.
1 -1 -2.
5 14 34 — — — — — — — — — — — -1.
11 — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = -12 A, VGS = 0 Note1 I F = -12 A, VGS = 0 diF/ dt = 20 A/ µs Test Conditions I D = -10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, I D = -1 mA I D = -6 A, VGS = -10 V Note1 I D = -6 A, VGS = -4 V Note1 I D = -6 A, VDS = -10 V Note1 VDS = -10 V VGS = 0 f = 1 MHz VDD = -10 V VGS = -10 V I D = -12 A VGS = -4 V, ID = -6 A VDD ≅ -10 V Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 1.
Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd t...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)