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HAT1036R

Renesas
Part Number HAT1036R
Manufacturer Renesas
Description Silicon P-Channel Power MOSFET
Published May 2, 2023
Detailed Description HAT1036R Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance RDS (on) = 11 mΩ typ • Capable of...
Datasheet PDF File HAT1036R PDF File

HAT1036R
HAT1036R

Overview
HAT1036R Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance RDS (on) = 11 mΩ typ • Capable of –4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1 234 5678 DDDD SSS 123 REJ03G1149-0700 (Previous: ADE-208-662E) Rev.
7.
00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.
7.
00 Sep 07, 2005 page 1 of 6 HAT1036R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS –30 VGSS ±20 Drain current Drain peak current ID ID (pulse) Note 1 –12 –96 Body-drain diode reverse drain current IDR –12 Channel dissipation Pch Note 2 2.
5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR4 40 × 40 × 1.
6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3.
Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min –30 — — –1.
0 — — 12 — — — — — — — — — — — — Typ — — — — 11 21 20 4200 870 360 70 12 14 120 350 100 120 –0.
85 55 Max — ±0.
1 –1 –2.
5 14 34 — — — — — — — — — — — –1.
11 — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = –10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = –30 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –6 A, VGS = –10 V Note 3 ID = –6 A, VGS = –4 V Note 3 ID = –6 A, VDS = –10 V Note 3 VDS...


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