AO4420A N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4420A uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and com body diode characteristics.
This device is suitable for use as a synchronous switch in PWM applications.
Standard Product AO4420A is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 13.
7A (VGS = 10V) RDS(ON) 10.
5mΩ (VGS = 10V) RDS(ON) 12mΩ (VGS = 4.
5V) UIS Tested Rg,Ciss,Coss,Crss Tested
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°...