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AO4420A

Alpha & Omega Semiconductors
Part Number AO4420A
Manufacturer Alpha & Omega Semiconductors
Description N-Channel FET
Published Dec 1, 2008
Detailed Description AO4420A N-Channel Enhancement Mode Field Effect Transistor General Description The AO4420A uses advanced trench technolo...
Datasheet PDF File AO4420A PDF File

AO4420A
AO4420A

Overview
AO4420A N-Channel Enhancement Mode Field Effect Transistor General Description The AO4420A uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.
DataSheet4U.
com body diode characteristics.
This device is suitable for use as a synchronous switch in PWM applications.
Standard Product AO4420A is Pb-free (meets ROHS & Sony 259 specifications).
Features VDS (V) = 30V ID = 13.
7A (VGS = 10V) RDS(ON) < 10.
5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.
5V) UIS Tested Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current AF ID TA=70°C Pulsed Drain Current B B Maximum 30 ±12 13.
7 9.
7 60 20 60 3.
1 2 -55 to 150 Units V V A A mJ W °C Avalanche Current Repetitive avalanche energy L=0.
3mHB Power Dissipation TA=25°C TA=70°C IDM IAR EAR PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-AmbientA Maximum Junction-to-LeadC Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 28 54 21 Max 40 75 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AO4420A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.
DataSheet4U.
com Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=13.
7A TJ=125°C VGS=4.
5V, ID=12.
7A VDS=5V, ID=13.
7A Min 30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance 0.
004 1 5 100 µA nA V A 0.
6 40 1.
1 8.
3 12.
5 9.
7 2 10.
5 15 12 1 5 RDS(ON) gFS VSD IS mΩ mΩ S V A pF pF pF 30 37 0.
76 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNA...


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