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AO4422A

Alpha & Omega Semiconductors
Part Number AO4422A
Manufacturer Alpha & Omega Semiconductors
Description N-Channel FET
Published Dec 1, 2008
Detailed Description AO4422A N-Channel Enhancement Mode Field Effect Transistor General Description The AO4422A uses advanced trench technolo...
Datasheet PDF File AO4422A PDF File

AO4422A
AO4422A

Overview
AO4422A N-Channel Enhancement Mode Field Effect Transistor General Description The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This www.
DataSheet4U.
com device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Standard Product AO4422A is Pb-free (meets ROHS & Sony 259 specifications).
AO4422AL is a Green Product ordering option.
AO4422A and AO4422AL are electrically identical.
Features VDS (V) = 30V ID = 11A (V GS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.
5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 11 9.
3 50 3 2.
1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4422A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.
DataSheet4U.
com Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=11A TJ=125°C VGS=4.
5V, ID=9A VDS=5V, ID=11A Min 30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance 0.
003 1 5 ±100 µA nA V A 1 30 1.
7 11.
7 18 18 19 0.
76 3 15 22 24 1 4.
5 RDS(ON) mΩ mΩ S V A pF pF pF gFS VSD IS Diode Forward Voltage IS=1A,VGS=0V Maximum...


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