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AO4420L

Alpha & Omega Semiconductors
Part Number AO4420L
Manufacturer Alpha & Omega Semiconductors
Description N-Channel FET
Published Dec 1, 2008
Detailed Description Rev 4: Nov 2004 AO4420, AO4420L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Descriptio...
Datasheet PDF File AO4420L PDF File

AO4420L
AO4420L

Overview
Rev 4: Nov 2004 AO4420, AO4420L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.
DataSheet4U.
com body diode characteristics.
This device is suitable for use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package.
AO4420L ( Green Product ) is offered in a lead-free package.
Features VDS (V) = 30V ID = 13.
7A RDS(ON) < 10.
5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.
5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead PD TJ, TSTG Maximum 30 ±12 13.
7 9.
7 60 3.
1 2 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 28 54 21 Max 40 75 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.
DataSheet4U.
com Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=13.
7A TJ=125°C Min 30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance 0.
004 1 5 100 2 10.
5 15 12 1 5 µA nA V A 0.
6 40 1.
1 8.
3 12.
5 9.
7 RDS(ON) gFS VSD IS mΩ mΩ S V A pF pF pF VGS=4.
5V, ID=12.
7A Forward Transconductance VDS=5V, ID=13.
7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 30 37 0.
76 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Cr...


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