SPN8878
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
The SPN8878 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS • Power Management in Note book • Powered System • DC/DC Converter
• Load Switch
FEATURES
30V/20A,RDS(ON)=12mΩ@VGS=10V 30V/15A,RDS(ON)=17mΩ@VGS=4.
5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistanc...