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SPN8842

SYNC POWER
Part Number SPN8842
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Sep 28, 2023
Detailed Description SPN8842 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8842 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN8842 PDF File

SPN8842
SPN8842

Overview
SPN8842 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The SPN8842 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES PIN CONFIGURATION(PPAK5x6-8L)  40V/100A,RDS(ON)=1.
7mΩ@VGS=10V  40V/100A,RDS(ON)=2.
6mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK5x6-8L package design PART MARKING 2022/8/18 Ver 2 Page 1 SPN8842 N-Channel Enhancement Mode MOSFET PPAK5x6-8L PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8842DN8RGB PPAK5x6-8L ※ SPN8842DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage TC=25℃ Continuous Drain Current (Silicon Limited) TC=100℃ Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipation TC=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 2022/8/18 Ver 2 Part Marking SPN8842 Symbol VDSS VGSS ID IDM IAS EAS PD TJ TSTG RθJC RθJA Typical 40 ±20 100 82 400 43 462 83 150 -55/150 1.
5 55 Unit V V A A A mJ W ℃ ℃ ℃/W ℃/W Page 2 SPN8842 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Curre...


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