DatasheetsPDF.com

SPN8854

SYNC POWER
Part Number SPN8854
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Sep 28, 2023
Detailed Description SPN8854 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8854 is the N-Channel enhancement mode power field effect ...
Datasheet PDF File SPN8854 PDF File

SPN8854
SPN8854

Overview
SPN8854 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8854 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The SPN8854 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  150V/68A, RDS(ON)=17 mΩ@VGS=10V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability PIN CONFIGURATION PPAK5x6 PART MARKING 2023/06/27 Ver 1 Page 1 SPN8854 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION PPAK5x6 Pin 4 5-8 1-3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number SPN8854DN8RGB Package PPAK5X6 ※ SPN8854DN8RGB : T/R ; Pb – Free ; Halogen – Free Part Marking SPN8854 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Drain-Source Voltage Gate –Source Voltage Parameter Continuous Drain Current (Silicon Limited) TC=25℃ TC=100℃ Pulsed Drain Current Single Pulse Avalanche Energy ( TC=25℃, L=0.
4mH.
) Power Dissipation@ TC=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJC Typical 150 ±20 68 48 230 125 95 -55/150 -55/150 1.
3 Unit V V A A mJ W ℃ ℃ ℃ /W 2023/06/27 Ver 1 Page 2 SPN8854 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Gate resistance Diode Forward Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)