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SPN8812

SYNC POWER
Part Number SPN8812
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Sep 28, 2023
Detailed Description SPN8812 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8812 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN8812 PDF File

SPN8812
SPN8812

Overview
SPN8812 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The SPN8812 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  100V/63A,RDS(ON)=9.
8mΩ@VGS=10V  100V/63A,RDS(ON)=13.
0mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6-8L) PART MARKING 2023/07/17 Ver 3 Page 1 SPN8812 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8812DN8RGB PPAK5x6-8L ※ SPN8812DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current (Silicon Limited) Pulsed Drain Current TC=25℃ TC=100℃ Single Pulse Avalanche Energy ( TC=25℃, L=0.
1mH.
) Power Dissipation (TC=25℃) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Part Marking SPN8812 Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJC Typical 100 ±20 63 40 160 31 83 -55/150 -55/150 1.
5 Unit V V A A mJ W ℃ ℃ ℃ /W 2023/07/17 Ver 3 Page 2 SPN8812 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Parameter Symbol Conditions Min.
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductan...


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