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SPN8810

SYNC POWER
Part Number SPN8810
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Jan 7, 2019
Detailed Description SPN8810 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8810 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN8810 PDF File

SPN8810
SPN8810

Overview
SPN8810 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8810 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control 　 FEATURES  100V/74A,RDS(ON)=8.
0mΩ@VGS=10V  100V/74A,RDS(ON)=10.
5mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6-8L) 2023/07/13 Ver 4 PART MARKING Page 1 SPN8810 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number SPN8810DN8RGB Package PPAK5x6-8L ※ SPN8810DN8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current TA=25℃ TA=100℃ Avalanche Energy, Single Pulse (L=0.
4mH , Tc=25℃) Power Dissipation Operating Junction Temperature TA=25℃ Storage Temperature Range Thermal Resistance-Junction to Case (PPAK5x6) Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJC Part Marking SPN8810 Typical 100 ±20 74 47 260 245 83 -55/150 -55/150 1.
5 Unit V V A A mJ W ℃ ℃ ℃/W 2023/07/13 Ver 4 Page 2 SPN8810 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Sourc...


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