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SPN8852

SYNC POWER
Part Number SPN8852
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Apr 10, 2019
Detailed Description SPN8852 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8852 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN8852 PDF File

SPN8852
SPN8852

Overview
SPN8852 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control FEATURES  150V/4.
1A,RDS(ON)=88mΩ@VGS=10V  150V/2A,RDS(ON)=100mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6–8L) PART MARKING 2020/03/10 Ver 2 Page 1 SPN8852 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8852DN8RGB PPAK5x6-8L ※ SPN8852DN8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ Pulsed Drain Current Avalanche Energy, Single Pulse (L=0.
1mH , Tc=25℃) Power Dissipation TC=25℃ TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient (steady state) Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJc RθJA Part Marking SPN8852 Typical 150 ±20 4.
1 20 40 5.
0 2.
5 -55/150 -55/150 25 50 Unit V V A A mJ W ℃ ℃ ℃/W 2020/03/10 Ver 2 Page 2 SPN8852 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current...


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