SPN2302A
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN2302A is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES 20V/4.
0A,RDS(ON)=75mΩ@VGS=4.
5V 20V/3.
4A,RDS(ON)=95mΩ@VGS=2.
5V 20V/2.
8A,RDS(ON)=135mΩ@VGS=1.
8V Super high density cell desi...