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SPN2302W

SYNC POWER
Part Number SPN2302W
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published May 20, 2014
Detailed Description SPN2302W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302W is the N-Channel logic enhancement mode power field ...
Datasheet PDF File SPN2302W PDF File

SPN2302W
SPN2302W

Overview
SPN2302W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES 20V/3.
6A,RDS(ON)= 97mΩ@VGS=4.
5V 20V/3.
1A,RDS(ON)= 113mΩ@VGS=2.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING S02WYW 2012/08/06 Ver.
2 Page 1 http://www.
Datasheet4U.
com SPN2302W N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 ORDERING INFORMATION Part Number SPN2302WS23RG SPN2302WS23RGB Package SOT-23 SOT-23 Part Marking S02WYW S02WYW Symbol G S D Description Gate Source Drain ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2302WS23RG : Tape Reel ; Pb – Free ※ SPN2302WS23RGB : Tape Reel ; Pb – Free; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 20 ±12 3.
2 2.
6 10 1.
6 1.
25 0.
8 150 -55/150 100 Unit V V A A A W ℃ ℃ ℃/W 2012/08/06 Ver.
2 Page 2 SPN2302W N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Bre...


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