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SPN2308

SYNC POWER
Part Number SPN2308
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Oct 15, 2009
Detailed Description SPN2308 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2308 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN2308 PDF File

SPN2308
SPN2308


Overview
SPN2308 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2308 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES  20V/2.
0A,RDS(ON)=380mΩ@VGS=4.
5V  20V/1.
5A,RDS(ON)=450mΩ@VGS=2.
5V  20V/1.
0A,RDS(ON)=800mΩ@VGS=1.
8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-3L package design APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter PIN CONFIGURATION (SOT-23-3L) PART MARKING 2020/02/13 Ver.
3 Page 1 SPN2308 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN2308S23RGB SOT-23-3L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2308S23RGB : Tape Reel ; Pb – Free ; Halogen – Free Part Marking 08 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 20 ±12 2.
0 1.
5 10 1.
6 1.
25 0.
8 -55/150 -55/150 105 Unit V V A A A W ℃ ℃ ℃/W 2020/02/13 Ver.
3 Page 2 SPN2308 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions ...


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