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SPN2304W

SYNC POWER
Part Number SPN2304W
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Jul 25, 2014
Detailed Description SPN2304W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304W is the N-Channel logic enhancement mode power field...
Datasheet PDF File SPN2304W PDF File

SPN2304W
SPN2304W

Overview
SPN2304W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  30V/3.
2A,RDS(ON)=65mΩ@VGS=10V  30V/2.
0A,RDS(ON)=90mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2020/1/15 Ver.
2 Page 1 SPN2304W N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN2304WS23RGB SOT-23 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2304WS23RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking S04W ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 3.
2 2.
6 10 1.
25 1.
25 0.
8 150 -55/150 100 Unit V V A A A W ℃ ℃ ℃/W 2020/1/15 Ver.
2 Page 2 SPN2304W N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leak...


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