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SPN2302

SYNC POWER
Part Number SPN2302
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Apr 16, 2019
Detailed Description SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN2302 PDF File

SPN2302
SPN2302

Overview
SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  20V/3.
6A,RDS(ON)=80mΩ@VGS=4.
5V  20V/3.
1A,RDS(ON)=95mΩ@VGS=2.
5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARKING 2020/02/12 Ver.
5 Page 1 SPN2302 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN2302S23RGB SOT-23-3L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2302S23RGB : Tape Reel ; Pb – Free ; Halogen – Free Part Marking 02 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 20 ±12 3.
2 2.
6 10 1.
6 1.
25 0.
8 -55/150 -55/150 100 Unit V V A A A W ℃ ℃ ℃/W 2020/02/12 Ver.
5 Page 2 SPN2302 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage G...


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