SPN2308
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN2308 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES 20V/2.
0A,RDS(ON)=380mΩ@VGS=4.
5V 20V/1.
5A,RDS(ON)=450mΩ@VGS=2.
5V 20V/1.
0A,RDS(ON)=800mΩ@VGS=1.
8V Super high density cell desi...