TPC8027
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8027
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
Unit: mm
• Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 2.
1 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 48 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
(t = 10 ...