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TPC8003

Toshiba Semiconductor
Part Number TPC8003
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8003 Lithium Ion Battery Applications P...
Datasheet PDF File TPC8003 PDF File

TPC8003
TPC8003

Overview
TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 5.
4 mΩ (typ.
) High forward transfer admittance : |Yfs| = 21 S (typ.
) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode : Vth = 0.
8~2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 13 52 2.
4 1.
0 220 13 0.
24 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power dissipation Drain power dissipation Weight: 0.
080 g (typ.
) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Not...


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