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TPC8001

Toshiba Semiconductor
Part Number TPC8001
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8001 Lithium Ion Battery Applications P...
Datasheet PDF File TPC8001 PDF File

TPC8001
TPC8001

Overview
TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement−mode : RDS (ON) = 15 mΩ (typ.
) : |Yfs| = 11 S (typ.
) Unit: mm : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 7 28 2.
4 1.
0 64 7 0.
24 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power dissipation Drain power dissipation Weight: 0.
080 g (typ.
) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-02-06 TPC8001 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 52.
1 125 Unit °C/W °C/W Marking (Note 5) TPC8001 ※ Type Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.
4 × 25.
4 × 0.
8 (unit: mm) FR-4 25.
4 × 25.
4 × 0.
8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.
0 mH, RG = 25 Ω, IAR = 7 A Note 4: Reptitve rating; pulse width limited by maximum channel temperature Note 5: ● on lower left of the marking indicates Pin 1.
※ ...


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