Part Number
|
TPCC8076 |
Manufacturer
|
Toshiba |
Description
|
Silicon N-Channel MOSFET |
Published
|
Nov 11, 2013 |
Detailed Description
|
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCC8076
1. Applications
• Lithium-Ion Secondary Batteries • Notebook PCs • Mobil...
|
Datasheet
|
TPCC8076
|
Overview
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCC8076
1.
Applications
• Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments
2.
Features
(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.
7 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
3 mA)
3.
Packaging and Internal Circuit
TPCC8076
1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
33
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note...
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