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TPCC8008

Toshiba Semiconductor
Part Number TPCC8008
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor Silicon N-Channel MOS Type
Published Oct 1, 2012
Detailed Description TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCC8008 Notebook PC Applications Portable...
Datasheet PDF File TPCC8008 PDF File

TPCC8008
TPCC8008


Overview
TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCC8008 Notebook PC Applications Portable Equipment Applications • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 4.
5 mΩ (typ.
) ( VGS = 10 V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1.
0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±25 25 75 30 1.
9 www.
DataSheet.
net/ Unit V V V A W W W mJ A mJ °C °C 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Pulsed (Note 1) (Tc = 25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation Drain power dissipation Drain power dissipation 0.
7 163 25 2.
58 150 −55 to 150 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25℃) (Note 4) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Weight: 0.
02 g (typ.
) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle with care.
Circuit Configuration 8 7 6 5 1 2 3 4 1 2009-09-24 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ TPCC8008 Thermal Characteristics Characteristic Thermal resistance, channe...


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