SPN2326
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN2326 is the N-Channel enhancement mode power field effect
transistor which is produced using super high cell density DMOS trench technology.
The SPN2326 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS Powered System DC/DC Converter Load Switch
FEATURES 100V/3A,RDS(ON)=310mΩ@VGS=10V High density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-23-6L package design
PI...