Part Number
|
TPCC8007 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
MOSFETs |
Published
|
Sep 20, 2014 |
Detailed Description
|
TPCC8007
MOSFETs Silicon N-channel MOS (U-MOS)
TPCC8007
1. Applications
• • Notebook PCs Mobile Handsets
2. Features
...
|
Datasheet
|
TPCC8007
|
Overview
TPCC8007
MOSFETs Silicon N-channel MOS (U-MOS)
TPCC8007
1.
Applications
• • Notebook PCs Mobile Handsets
2.
Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.
5 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse ...
Similar Datasheet