HAT1033T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-532H (Z) 9th.
Edition February 1999 Features • • • • Low on-resistance Capable of 2.
5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 12 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate HAT1033T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings – 20 ± 10 – 3.
5 – 28 – 3.
5 Unit V V A A A W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 1.
3 150 – 55 to + ...

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