Silicon P-Channel Power MOSFET
HAT1036R Silicon P Channel Power MOS FET Power Switching ADE-208-662D (Z) 5th. Edition February 1999 Features • Low on-resistance R DS(on) = 11 mΩ typ • Capable of -4 V gate drive • Low drive current • High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1036R Absolute Maximum R...
Hitachi Semiconductor