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1SS369

Part Number 1SS369
Manufacturer SEMTECH
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Published May 26, 2015
Detailed Description 1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage • Low reverse current Applications • High...
Datasheet 1SS369




Overview
1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage • Low reverse current Applications • High Speed Switching PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 40 V Total Capacitance at f = 1 MHz Symbol VRM VR IO IFM IFSM Ptot TJ Topr ...






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