Part Number
|
1SS302 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
www.DataSheet.co.kr
1SS302
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS302
Ultra High Speed Switching Applications
...
|
Datasheet
|
1SS302
|
Overview
www.
DataSheet.
co.
kr
1SS302
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS302
Ultra High Speed Switching Applications
z Small package z Low forward voltage z Small total capacitance : SC-70 : VF (3) = 0.
90V (typ.
) : CT = 0.
9pF (typ.
) Unit: mm
z Fast reverse recovery time : trr = 1.
6ns (typ.
)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 85 80 300 (*) 100 (*) 2 (*) 100 125 −55~125 Unit V V mA mA A mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.
006g
― SC-70 1-2P1C
Note...
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