|
Part Number
|
1SS308 |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
Silicon Epitaxial Planar Type Diode |
|
Published
|
Mar 23, 2005 |
|
Detailed Description
|
1SS308
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS308
Ultra High Speed Switching Applications
Unit: mm
Small pa...
|
|
Datasheet
|
1SS308
|
Overview
1SS308
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS308
Ultra High Speed Switching Applications
Unit: mm
Small package
: SC-74A
Low forward voltage
: VF (3) = 0.
92 V (typ.
)
Fast reverse recovery time : trr = 1.
6 ns (typ.
)
Small total capacitance : CT = 2.
2 pF (typ.
)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10ms)
IFSM
2 (*)
A
Power dissipation
PD (Note 1, 3)
300
mW
PD (Note 2)
200
Junction temperature
Tj (Note 1)
150
°C
Tj (Note 2)
125
Storage temp...
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