TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.
54V (typ.
) : IR = 5μA (max) : SC−70 1SS322 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation VRM VR IFM IO P 45 V 40 V 300 mA 100 mA 100 mW Junction temperature Tj 125 °C JEDEC ― Storage temperature Tstg −55∼125 °C JEITA SC−70 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in TOSHIBA 1−2P1D ...

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